产品参数：
Has the following parameters and properties:
- **VDS(V):** The maximum drain-source voltage is -100V, suitable for medium voltage application scenarios.
- **VGS(㊣V):** The gate-source voltage range is ㊣20V, providing a larger control range.
- **Vth(V):** The threshold voltage is -2V, which means conduction starts at this voltage.
- **VGS=4.5V(m次):** The drain-source resistance is 36m次 when the gate-source voltage is 4.5V.
- **VGS=10V(m次):** The drain-source resistance is 32m次 when the gate-source voltage is 10V.
- **ID (A):** Maximum drain current is -28A, suitable for higher current applications.
- **Technology:** Manufactured using Trench technology, with good performance and stability.
- **Package:** Using DFN8 (5X6) package, small size, suitable for compact space applications.
领域和模块应用：
The product is suitable for a variety of areas and modules, such as:
In the power management module, VBQA2104N can be used as a switching tube for power switch control and power management, such as in power inverters, DC-DC converters and LED drivers.
In automotive electronic modules, VBQA2104N can be used in automotive electric motor drivers and controllers for battery management systems and power switch control of automotive electronic equipment.
In the field of industrial automation, VBQA2104N can be used for power switch control in equipment such as industrial robots, PLC controllers and frequency converters to achieve precise motion control and energy consumption management.
In the communication equipment module, VBQA2104N can be used in the power amplifier and power management unit of the communication base station to achieve signal amplification and stable power supply.
To sum up, VBQA2104N, as a powerful and stable single P-channel MOSFET, is suitable for a variety of fields and modules, and can realize functions such as power switch control, power management and signal amplification.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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