VBFB165R05S is a unipolar N-type power field effect transistor (MOSFET) with the following characteristics:
- Rated voltage up to 650V, suitable for high voltage application scenarios.
- Wide gate-source voltage range (±30V), with good voltage tolerance.
- Low threshold voltage (3.5V) helps reduce power loss.
- Drain-source resistance is 950mΩ at VGS=10V, providing reliable turn-on characteristics.
- Drain current is 5A, suitable for low to medium power requirements.
- Using SJ_Multi-EPI technology, it has excellent thermal stability and reliability.
- Packaged as TO251, easy to install and heat dissipate.
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Product model: VBFB165R05S
Brand: VBsemi
parameter:
- Type: Unipolar N-type
- Rated voltage (VDS): 650V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 950
- Drain current (ID): 5A
- Technology: SJ_Multi-EPI
Package: TO251
Examples of applicable fields and modules:
1. Power management: Can be used to develop various types of power management modules, such as power switches, power inverters, etc.
2. Electric vehicle battery management system: It is suitable for the battery management system in electric vehicles to achieve effective control of battery charge and discharge.
3. Industrial control equipment: It can be used in power switch modules in industrial automation control equipment to provide reliable power output.
4. Communication equipment: Power management modules suitable for communication base stations, network equipment, etc. to ensure stable operation of the equipment.
5. LED lighting control: Power switch module used in LED lighting systems to achieve precise control and adjustment of LED lights.
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