产品参数:
Detailed parameter description:
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 200V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 38
- Maximum drain current (ID): 30A
- Technology: Trench
-Package: DFN8(5X6)
领域和模块应用:
Its features include high drain-source voltage and moderate drain current, as well as low drain-source resistance, making it widely used in the following fields and modules:
1. Power module: VBQA1204N is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while low drain-source resistance reduces power consumption and losses.
2. LED lighting module: In the field of LED lighting, VBQA1204N can be used in modules such as LED drive power supply, lighting control and power management. Its high voltage and current capabilities can meet the high power and performance requirements of LED lighting equipment, while the DFN8 (5X6) package can provide good heat dissipation performance.
3. Automotive electronic modules: In the field of automotive electronics, VBQA1204N can be used in modules such as vehicle power management, motor drive and lighting control. Its high voltage and current capabilities can meet the high power and high performance requirements of automotive electronic equipment, while the DFN8 (5X6) package can meet the compact size and high-density integration requirements of automotive electronic modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性