产品简介:
VBsemi VBQA1152N is a unipolar N-type MOSFET with a maximum drain-source voltage of 150V and a maximum drain current of 53.7A. It adopts a trench structure (Trench) design, which is beneficial to reducing the resistance during turn-on , improving switching speed and power density. The threshold voltage is 3V, and at a gate voltage of 10V, it has a drain-source resistance of about 16mΩ, showing good conduction characteristics.
VBsemi VBQA1152N is widely used in light electric vehicles, smart homes, medical equipment and LED lighting, and the role it plays in these applications.
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