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VBQA1152N 产品详细

产品简介:

VBsemi VBQA1152N is a unipolar N-type MOSFET with a maximum drain-source voltage of 150V and a maximum drain current of 53.7A. It adopts a trench structure (Trench) design, which is beneficial to reducing the resistance during turn-on , improving switching speed and power density. The threshold voltage is 3V, and at a gate voltage of 10V, it has a drain-source resistance of about 16mΩ, showing good conduction characteristics.

VBsemi VBQA1152N is widely used in light electric vehicles, smart homes, medical equipment and LED lighting, and the role it plays in these applications.

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产品参数:

**parameter:**
- Unipolar N-type MOSFET
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 16
- Maximum drain current (ID): 53.7A
- Technology: Trench (trench structure)
-Package: DFN8(5X6)

领域和模块应用:

**Application Introduction:**
1. **Light electric vehicle controller:** VBsemi VBQA1152N is suitable for the controller module of light electric vehicles. It can be used as a power switching device to control the start, stop and speed adjustment of the motor, providing efficient and reliable power output. .

2. **Smart home equipment:** In smart home equipment, VBsemi VBQA1152N can be used as a power switching device to control the power supply of home appliances and provide efficient power management functions.

3. **Medical equipment module:** Since VBsemi VBQA1152N has high drain-source voltage and current capabilities, it is suitable for power control and power regulation functions in medical equipment modules to ensure the stable operation of medical equipment.

4. **LED lighting driver:** In LED lighting drivers, VBsemi VBQA1152N can be used as a power switching device to control the brightness and lighting effects of LED lights to provide efficient lighting solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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