产品简介：
VBsemi's VBQA1101N is a Single N-type field effect transistor (FET) with the following key parameters:
- Maximum drain-source voltage (VDS) is 100V, suitable for medium voltage applications.
- The maximum gate-source voltage (VGS) is plus or minus 20V, with high voltage tolerance.
- The gate threshold voltage (Vth) is 2.5V, indicating that the device has a lower gate voltage.
- The on-resistance is 12mΩ at VGS=4.5V and 9mΩ at VGS=10V, showing lower on-resistance.
- Maximum drain current (ID) is 65A, with moderate current handling capability.
- Adopt Trench technology, with good performance and reliability.
- The package is DFN8 (5X6), and the small package is suitable for high-density surface mount applications.
VBQA1101N is suitable for various application fields that require medium voltage, moderate current and low on-resistance, providing reliable power switching solutions for modules in different fields.
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领域和模块应用：
Application Introduction:
VBQA1101N is suitable for a variety of fields and modules, including but not limited to:
1. **Power module**: Due to its low on-resistance and moderate current carrying capacity, VBQA1101N can be used in power switching devices in power modules, such as switching power supplies, inverters and voltage regulators, to provide efficient Power switching solutions.
2. **Mobile devices**: This device has a small package and moderate power characteristics, and is suitable for use in power management circuits in mobile device modules, such as smartphones, tablets, etc., to provide stable and efficient power control.
3. **LED Driver**: VBQA1101N can also be used in power switching circuits in LED driver modules to provide efficient LED lighting solutions.
4. **Industrial Control**: Due to its stability and reliability, VBQA1101N can be used in power switching circuits in industrial control modules, such as PLC and industrial automation equipment, to provide efficient power control and conversion capabilities.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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