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VBPB19R47S 产品详细

产品简介:

Product introduction:
VBsemi's VBPB19R47S is a single N-type power field effect transistor (MOSFET) using SJ_Multi-EPI technology. This product features high voltage tolerance and low on-resistance, making it suitable for a variety of power applications.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Model: VBPB19R47S
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 900V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 100 m次
- Rated current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO3P

领域和模块应用:




Examples of applicable fields and modules:
1. Industrial power module: Because VBPB19R47S has higher rated voltage and rated current, it can be used in switching power supplies and inverters in industrial power modules.
2. Electric vehicle charger: Because this device has high voltage tolerance and low on-resistance, it is suitable for use in DC-DC converters and charging control modules in electric vehicle chargers.
3. Solar inverter: VBPB19R47S can be used as a power switching device in a solar inverter to convert DC power generated by solar panels into AC power.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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