产品参数：
Detailed parameter description:
- Product model: VBPB18R47S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 90
- Maximum drain current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO3P
领域和模块应用：
Examples of application areas:
1. Industrial power module: Due to its high voltage and high current characteristics, VBPB18R47S can be used in industrial power modules to provide stable power output.
2. Electric vehicle charging piles: In electric vehicle charging piles, which need to withstand higher voltages and currents, VBPB18R47S can be used as a switching element to control and regulate the charging process.
3. Solar inverter: In a solar inverter, high-efficiency power switching devices are required to achieve conversion and output of solar energy. The high voltage and high current characteristics of the VBPB18R47S make it a suitable choice.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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