产品参数:
Detailed parameter description:
- Product model: VBPB18R15S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 380
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO3P
领域和模块应用:
Examples of applicable areas and modules:
1. High-performance power modules: The high drain-source voltage and drain current of the VBPB18R15S make it suitable for designing high-performance power modules, such as those used in data centers and communication base stations.
2. Industrial automation control systems: Due to its high voltage and high current characteristics, it can be used in power switch modules in industrial automation control systems, such as for motor control and robotic systems.
3. Medical equipment: In the medical field, this device can be used to design high-performance power amplifiers and control circuits in medical equipment, such as medical imaging equipment and surgical instruments.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性