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VBPB18R11S 产品详细

产品简介:

Product introduction:
VBsemi's VBPB18R11S is a Single N MOSFET with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS, positive and negative) of 30V, and a gate threshold voltage (Vth) of 3.5V. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO3P.

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产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 500
- Maximum drain current (ID): 11A

领域和模块应用:

Examples of applicable fields and modules of this product:
1. Electric vehicle motor driver: Since VBPB18R11S has a high drain-source voltage and large drain current, it can be used in electric vehicle motor driver modules to provide reliable power output.
2. Industrial high-voltage power supply system: In the industrial field, VBPB18R11S can be used in the switching power supply module of the high-voltage power supply system to achieve efficient energy conversion and stable power output.
3. Solar Inverter: Due to its high voltage and high current characteristics, VBPB18R11S is suitable for the power module of solar inverter, which is used to convert solar power into usable AC power.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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