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VBPB17R47S 产品详细

产品简介:

Product introduction:

VBPB17R47S is a single N-channel field effect transistor product produced by VBsemi. It has a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, the resistance in the on state is 80mΩ, and the maximum drain current (ID) is 47A. It adopts SJ_Multi-EPI technology and is packaged as TO3P.

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产品参数:

Detailed parameter description:

- Product model: VBPB17R47S
- Brand: VBsemi
- Parameters:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (㊣)
- Threshold voltage (Vth): 3.5V
- On-state resistance (m次) when VGS=10V: 80
- Maximum drain current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO3P

领域和模块应用:

Examples of application areas and modules:

VBPB17R47S products are suitable for the following fields and modules:

1. High-power applications: Due to its large maximum drain current and low on-state resistance, it can be used in high-power switching modules, such as power switches, motor drivers, etc.
2. Industrial electronics: In industrial control systems, it can be used in high-power industrial motor drivers, inverters and other modules to improve the control accuracy and energy efficiency of equipment.
3. Electric vehicle charging pile: As the power switching element of the charging pile, it is used to control the output power of the charging pile to achieve rapid charging of electric vehicles.
4. Solar inverter: Inverter module used in solar photovoltaic systems to convert DC power generated by solar panels into AC power and supply it to the power grid or household electrical equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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