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VBPB17R11S 产品详细

产品简介:

Product introduction:
VBPB17R11S is a single N-channel MOSFET produced by VBsemi. This product is suitable for a variety of applications requiring high performance and reliability. With a VDS rating of 700V and a continuous drain current (ID) of 11A, it uses SJ_Multi-EPI technology to ensure stability and reliability in various environments.

Detailed parameter description:
- VDS(V): drain-source voltage - 700V
- VGS(±V): Gate-source voltage (±) - 30V
- Vth(V): Threshold voltage - 3.5V
- VGS=10V(mΩ): On-resistance at VGS=10V - 450 mΩ
- ID (A): Continuous Drain Current - 11A
- Technology: SJ_Multi-EPI

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产品参数:

Parameter: Single N
VDS(V)ㄩ700
VGS(㊣V): 30
Vth(V)ㄩ3.5
VGS=10V(m次): 450
ID(A)ㄩ11
TechnologyㄩSJ_Multi-EPI
Package: TO3P

领域和模块应用:

Application scenario:
VBPB17R11S MOSFET is suitable for many fields and modules, here are some examples:
- Power Converter: Suitable for various types of power converters and inverters, such as switching power supplies, UPS power supplies and solar inverters.
- High voltage applications: Can be used in circuits and systems requiring high voltage and power, such as industrial equipment, medical equipment and communication base stations.
- Electric vehicles: Motor drives, battery management systems and charging equipment for electric vehicles.
- Industrial automation: Suitable for various industrial automation control systems and robot applications, providing stable power output and reliable performance.
- High-frequency applications: Can be used in high-frequency switching power supplies and radio frequency (RF) circuits, such as wireless communications and radar systems.

VBPB17R11S MOSFET has high performance and reliability and is suitable for a variety of fields and modules. It is one of the first choices of engineers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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