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VBPB16R47S 产品详细

产品简介:

Product introduction:
The VBPB16R47S is a high performance single N-type field effect transistor with a rated drain-source voltage of 600V and a maximum drain current of 47A. The use of SJ_Multi-EPI technology and TO3P packaging ensures its stability and reliability in high-power applications. Suitable for various occasions requiring high voltage and high power.

Detailed parameter description:
- This product is a single N-type field effect transistor, suitable for high power applications.
- With high rated drain-source voltage (VDS) and extremely low on-resistance, it is suitable for applications requiring high voltage and high power.
- Technically adopts SJ_Multi-EPI technology to improve performance and reliability.

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产品参数:

parameter:
- Type: Single N type
- Rated drain-source voltage (VDS): 600V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 60
- Maximum drain current (ID): 47A
- Technology: SJ_Multi-EPI
Package: TO3P

领域和模块应用:

for example:
1. Industrial power system module: used for high-power power conversion and control in factories and facilities, such as frequency converters, industrial electric furnaces, etc.
2. Solar inverter module: used in the inverter part of the solar power generation system to convert DC power into AC power to supply power to the grid or load.
3. Electric vehicle power module: used in the motor drive and battery management system of electric vehicles to provide high-power power conversion and control.
4. High-performance power module: used in various power systems that require high power and high efficiency, such as server power supplies, industrial control power supplies, etc.
5. High-performance industrial drive module: used for various industrial drive systems that require high power and precise control, such as motor control of large mechanical equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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