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VBPB16R20S 产品详细

产品简介:

Product introduction: VBsemi's VBPB16R20S is a TO3P packaged N-channel field effect transistor, manufactured using SJ_Multi-EPI technology. It features a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 20A, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and an on-resistance (VGS) of 190mΩ =10V). This product is suitable for low to medium power applications.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 600V, VGS (gate-source voltage) is ㊣30V, Vth (gate threshold voltage) is 3.5V.
- Current parameters: ID (drain current) is 20A.
- Technical characteristics: Using SJ_Multi-EPI technology.
- On-resistance: 190m次 at VGS=10V.
- Package: TO3P.

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter: Suitable for medium and low power power inverter modules, such as household UPS (uninterruptible power supply system) and solar inverters.
2. Industrial control system: used for medium and low power industrial controllers and actuators, such as temperature controllers, flow controllers, etc.
3. Power tool driver: In power tools, it can be used to drive medium-power motors, such as electric drills, electric hammers, etc.
4. LED lighting controller: The controller module used in LED lighting products provides the power output required by LED lamp beads.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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