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VBPB16R15S 产品详细

产品简介:

Product introduction:
VBsemi's VBPB16R15S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 15A. This product is packaged in TO3P and is suitable for a variety of application scenarios.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 280
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO3P

领域和模块应用:

Examples of applicable fields and modules:
1. Power switching modules: The high drain-source voltage and drain current of the VBPB16R15S make it ideal for use in high-power power switching modules such as power electronic converters and switching power supplies.
2. High frequency inverter: Due to its low on-resistance and high voltage capability, this MOSFET can be used in high-frequency inverters, such as solar inverters and variable frequency air conditioners.
3. Automotive electronics: In automotive electronic systems, this device can be used in power inverters and drives of electric vehicles to achieve efficient energy conversion and power control of electric vehicles.
4. Industrial high-voltage applications: In the fields of industrial automation and machinery, VBPB16R15S can be used in applications such as high-voltage power supplies, motor controls, and industrial electronic devices to provide reliable power switching and current control.

These areas and modules are just some examples of where the VBPB16R15S may be suitable, the actual application depends on the specific circuit design and requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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