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VBPB16R11S 产品详细

产品简介:

Product introduction:
VBsemi's VBPB16R11S is a single N-channel field effect transistor suitable for a variety of power electronic applications. The device has a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 11A, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged in TO3P, it has good heat dissipation performance and stability. As a high-performance field effect transistor, VBPB16R11S has broad application prospects in these fields.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Static drain-source resistance (VGS=10V): 380 m次
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO3P

领域和模块应用:

Application examples:
1. Power management module: VBPB16R11S can be used in switching power supplies, inverters and other parts of various power management modules to provide stable power output.
2. LED lighting driver: In LED lighting products, VBPB16R11S can be used as a switching element in the LED driver module to provide stable current output.
3. Industrial electronic control system: In industrial electronic control systems, VBPB16R11S can be used as a switch control device to achieve efficient control of various equipment and machines.
4. Electric vehicle charging piles: In electric vehicle charging piles, VBPB16R11S can be used as a switching element to realize charging control of electric vehicles.
5. Solar inverter: In the solar inverter, VBPB16R11S can be used to convert the DC power generated by the solar panel into AC power, which is suitable for the inverter part of the solar power generation system.

These fields and modules require high-performance power devices to achieve stable power supply and effective energy conversion. As a high-performance field effect transistor, VBPB16R11S has broad application prospects in these fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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