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VBPB1254N 产品详细

产品简介:

The VBPB1254N is a single N-channel MOSFET with a rated drain-source voltage of 250V and a rated drain current of 60A. Using TO3P packaging, it is suitable for high-power power and electronic applications such as electric vehicle power systems, industrial power systems, and solar inverters. It provides stable and reliable power switching functions for these fields and promotes the development and application of high-power applications. Has good thermal characteristics and reliability.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Gate-source voltage (VGS) (㊣V): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 40m次
- Rated drain current (ID): 60A
- Technology: Trench structure (Trench)
Package: TO3P

领域和模块应用:

Example application:
1. **Electric vehicle power system**:
VBPB1254N is suitable for power inverters and drive controllers in electric vehicle powertrains. Its high rated drain-source voltage and drain current capabilities make it suitable for use in powertrain systems for high-power electric vehicles such as electric vehicles, electric motorcycles and e-bikes.

2. **Industrial Power System**:
In industrial power systems, VBPB1254N can be used as power switches in high-voltage DC power supplies, power converters, inverters and other equipment. Its low drain-source on-resistance and high rated drain-source voltage make it suitable for a variety of industrial control systems and power transmission equipment.

3. **Solar Inverter**:
In solar inverters, VBPB1254N can be used as a power switching element in the inverter circuit. Its high rated drain-source voltage and drain current characteristics make it suitable for high-power solar photovoltaic power generation systems, improving the efficiency and reliability of the inverter.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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