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VBPB1204N 产品详细

产品简介:

This product is a single N-type transistor with a rated drain-source voltage of 200V and is capable of operating with a gate-source voltage of ±20V. Its threshold voltage is 3V and the drain-source resistance is 48mΩ at VGS=10V. Maximum drain current is 60A. It adopts Trench technology and is packaged as TO3P.

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产品参数:

Product model: VBPB1204N
Brand: VBsemi
parameter:
- Transistor type: Single N
- Rated drain-source voltage (VDS): 200V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 48
- Maximum drain current (ID): 60A
- Technology: Trench
Package: TO3P

领域和模块应用:

**Application Introduction and Examples**:

1. **Power switch module**: Because VBPB1204N has higher rated voltage and current characteristics, it is suitable for power switching circuits in power switch modules. For example, it can be used in industrial UPS, power inverter and other modules.

2. **Electric vehicle charging pile**: This transistor is suitable for the power switching circuit in the electric vehicle charging pile. It is used to control the power conversion and output of the charging pile to achieve fast charging of electric vehicles.

3. **Solar Inverter**: In solar photovoltaic systems, VBPB1204N can be used in the power switching circuit of solar inverters to realize the conversion and output of solar energy. Its high voltage and current characteristics are suitable for high-power solar photovoltaic inverter applications.

4. **Industrial Motor Drivers**: Since this transistor has high maximum drain current and low drain-source resistance, it is suitable for power switching circuits in industrial motor drives, such as inverters and motor controllers. Power management module of other devices.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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