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VBP19R15S 产品详细

产品简介:

Product introduction:
VBP19R15S is a Single N-type power field effect transistor (MOSFET) produced by the VBsemi brand and is packaged in TO247. The device is manufactured using SJ_Multi-EPI technology and offers excellent performance. Its key features include a rated drain-source voltage (VDS) of 900V, a maximum drain current (ID) of 15A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 370mΩ at VGS=10V.

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产品参数:

Detailed parameter description:
- Product model: VBP19R15S
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 900V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 370m次
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO247

领域和模块应用:





Examples of application areas:
1. Industrial power system: VBP19R15S is suitable for power switch modules in industrial power systems, such as frequency converters, power converters, etc., for power regulation and control.
2. Solar inverter: This device can be used in the power switching circuit in the solar inverter to convert the DC power generated by the solar photovoltaic panel into AC power to supply power to the household or industrial power network.
3. Electric vehicle charging piles: VBP19R15S is also suitable for power switches in electric vehicle charging piles to control the current and voltage during the charging process to achieve fast and efficient charging.

These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBP19R15S make it an ideal choice in these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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