产品参数:
Detailed parameter description:
- Product model: VBP19R05S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 1500m次
- Rated drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package:TO247
领域和模块应用:
Examples of applicable fields and modules:
1. High-voltage power supply module: Since VBP19R05S has a high drain voltage and rated drain current, it is suitable for switching power supplies, inverters and converters in high-voltage power supply modules, and can be used in industrial control and power supply fields.
2. High-power LED lighting: In high-power LED lighting systems, power switching devices need to withstand high voltage and current. VBP19R05S can be used for switch control in LED drive circuits to achieve efficient power supply and brightness adjustment of LED lights.
3. Automotive electric system: In automobile electric systems, reliable power switching devices are needed to realize motor drive and battery management. VBP19R05S can be used for power control and power management in automobile electric systems, helping to achieve efficient operation and energy saving of electric vehicles. Row.
4. Solar inverter: VBP19R05S can be used as a key component of solar photovoltaic inverter to help achieve efficient conversion of solar energy and access to the power grid, and promote the utilization and promotion of renewable energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性