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VBP195R09 产品详细

产品简介:

Product introduction:
VBsemi's VBP195R09 is a single N-type field effect transistor with 950V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.3V threshold voltage (Vth), and 9A Drain current (ID). Manufactured using Plannar technology and packaged as TO247.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Product model: VBP195R09
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 950V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.3V
- On-resistance at VGS=10V: 1700 m次
- Maximum drain current (ID): 9A
- Technology: Plannar
-Package:TO247

领域和模块应用:


Application examples:
1. Industrial power module: suitable for conversion and control of industrial power supply.
2. Wind energy conversion system: Power electronic modules for wind power equipment.
3. Electric vehicle charger: suitable for power converters in electric vehicle charging piles.
4. Grid stabilizer: Power conditioning module used in grid stabilization equipment.
5. Welding equipment: suitable for power switching devices in high-voltage welding machines.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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