VBP195R06 - VBsemi MOS管制造商

VBP195R06 产品详细

描述
参数
应用
技术支持

产品简介：

Product introduction:
The VBsemi VBP195R06 is a single N-type field effect transistor with a drain-to-source voltage (VDS) of up to 950V, suitable for a variety of high-voltage applications. This product is manufactured using Plannar technology and has stable and reliable performance. The package form is TO247, which is easy to install and use. VBP195R06 is a product of VBsemi brand, specially designed to meet the needs of high-voltage electronic devices.

VBP195R06 can be widely used in various fields and modules of high-voltage electronic equipment, providing reliable power control and drive solutions for various applications.

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产品参数：

Detailed parameter description:
- Drain-source voltage (VDS): 950V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.3V
- Drain-source resistance (m次) at VGS=10V: 2400
- Maximum drain current (ID): 6A

领域和模块应用：

Examples of applicable fields and modules:
1. Industrial power supply: Due to its high drain-source voltage and high drain current, VBP195R06 can be used in industrial power modules such as high-voltage DC power supplies.
2. Electric vehicle charger: Its high voltage and reliability make it an ideal choice for electric vehicle charger modules.
3. Solar Inverter: In solar systems, VBP195R06 can be used as an inverter module to convert DC power generated by solar panels into AC power.
4. Medical equipment power supply: high-voltage power supply module for medical equipment, such as X-ray machines, CT scanners, etc.
5. Industrial automation: In the field of industrial automation, it can be used in high-voltage drive circuits and control systems.

*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性

技术支持：

* 如果您对产品有任何问题，请填写表格提交，我们会24小时内回复您

MOSFET

VBP195R06 产品详细

产品简介：

文件下载

下载PDF 文档

产品参数：

领域和模块应用：

技术支持：

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