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VBP18R47S 产品详细

产品简介:

Product introduction:
VBsemi's VBP18R47S model is a Single N-type power field effect transistor (MOSFET) packaged in TO247. The device is manufactured using SJ_Multi-EPI technology and offers excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 800V, a maximum drain current (ID) of 47A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 90mΩ at VGS=10V.

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产品参数:

Detailed parameter description:
- Product model: VBP18R47S
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 800V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 90m次
- Maximum drain current (ID): 47A
- Technology: SJ_Multi-EPI
-Package:TO247

领域和模块应用:

Examples of application areas:
1. Industrial power module: Since VBP18R47S has high rated drain-source voltage and drain current, it is suitable for industrial power modules, such as AC-DC converters and DC-DC converters, which can be used in industrial automation and power systems play an important role.
2. Electric vehicle charging piles: The high voltage and high current characteristics of this device make it very suitable for use as power switches in electric vehicle charging piles, enabling a fast and efficient charging process.
3. Solar inverter: In solar photovoltaic systems, VBP18R47S can be used as a key component of the inverter to convert the DC power generated by the solar panels into AC power to supply power to the household or industrial power network.

These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBP18R47S make it an ideal choice in these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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