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VBP18R35S 产品详细

产品简介:

Product introduction:
VBsemi's VBP18R35S is a single N-channel power MOSFET, using SJ_Multi-EPI technology and packaged in TO247. The device's high voltage tolerance and low on-resistance make it suitable for a variety of power applications.

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产品参数:

Detailed parameter description:
- Product model: VBP18R35S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- At VGS=10V, drain-source resistance (m次): 110
- Maximum drain current (ID): 35A
- Technology: SJ_Multi-EPI
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: The high voltage withstand capability and low on-resistance of VBP18R35S make it very suitable for use in industrial power modules, such as industrial motor drives, UPS systems, etc.
2. Solar inverter: In solar inverter, VBP18R35S can be used to achieve high-efficiency DC-AC conversion to provide power output from renewable energy.
3. Automotive electronic modules: Due to its high withstand voltage and high reliability, this device can be widely used in automotive electronic modules, such as electric vehicle battery management systems, electric power steering systems, etc.
4. LED lighting controller: VBP18R35S can be used as a power switching element in the LED lighting controller to achieve high efficiency and stability of the LED drive circuit.
5. Industrial automation equipment: In the field of industrial automation, this device can be used in modules such as motor control, power supply, and power regulation to improve the performance and reliability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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