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VBP18R25SFD 产品详细

产品简介:

Product introduction:
VBsemi's VBP18R25SFD is a single N-channel power MOSFET with up to 800V drain-source voltage (VDS), 30V gate-source voltage (VGS), and 3.5V threshold voltage (Vth). It is manufactured using SJ_Multi-EPI technology and packaged as TO247. This MOSFET is suitable for a variety of power electronic applications and provides reliable performance and efficient energy conversion.

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产品参数:

Detailed parameter description:
- Product model: VBP18R25SFD
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 140
- Maximum drain current (ID): 25A
- Technology: SJ_Multi-EPI
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power modules: Due to its high drain-source voltage and large drain current, VBP18R25SFD is suitable for industrial power modules such as inverters, DC power supplies and UPS.
2. Automotive electronic systems: In automotive electronic systems, VBP18R25SFD can be used to drive electric vehicle motors, control generators and other high-power electronic modules.
3. Solar inverter: As a power switch in a solar inverter, VBP18R25SFD can achieve efficient conversion and output of solar energy.
4. Welding equipment: In welding equipment, this MOSFET can be used to control the welding current and improve the stability and efficiency of the equipment.
5. Consumer electronics: Due to its high performance and reliability, VBP18R25SFD can also be used in power management and power control modules in consumer electronics, such as TVs, audio, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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