产品简介：
Product introduction:
Model: VBP18R25S
Brand: VBsemi
Package: TO247
Features: Single N-channel field effect transistor, using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a maximum continuous drain current of 25A ( ID), low on-state resistance is 138mΩ (VGS=10V).
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产品参数：
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 138m次
- Maximum continuous drain current (ID): 25A
- Technology: Using SJ_Multi-EPI technology
领域和模块应用：
Applications:
This product is suitable for the following areas and modules:
1. Industrial power module: Due to its high drain-source voltage and large current characteristics, it can be used in industrial power modules, such as DC regulated power supplies and frequency converters.
2. Electric vehicle charger: With high drain-source voltage and continuous drain current, it is suitable for electric vehicle charger modules and provides efficient and stable charging performance.
3. Solar inverter: Suitable for solar inverter modules to realize DC to AC conversion of solar photovoltaic panels and provide reliable power output.
4. High-voltage switching power supply: Due to its high drain-source voltage and low on-state resistance, it can be used in high-voltage switching power supply modules to achieve efficient and stable switching control.
These examples illustrate the wide range of applications of VBP18R25S products in industry, transportation, energy and other fields.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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