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VBP18R20S 产品详细

产品简介:

Product introduction:
VBsemi's VBP18R20S is a single N-channel field effect transistor (MOSFET) designed for high performance and reliability. Using SJ_Multi-EPI technology and packaged as TO247, it is suitable for various application scenarios.

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产品参数:

Detailed parameter description:
- Product model: VBP18R20S
- Brand: VBsemi
- Type: Single N-channel Field Effect Transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 220
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: The high drain-source voltage and drain current of VBP18R20S make it suitable for designing industrial power modules to provide stable and reliable power supply for factory equipment.
2. Electric vehicle charging piles: Due to its high performance and reliability, it can be used as a power switch module in electric vehicle charging piles to achieve fast charging and high-efficiency conversion.
3. Solar inverter: In the field of renewable energy, this device can be used as a power switch module in a solar inverter to convert solar energy into usable AC power and promote the development of clean energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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