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VBP18R18SE 产品详细

产品简介:

Product introduction:

VBP18R18SE is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Deep-Trench technology and is packaged as TO247. This product features high drain current and low on-resistance, making it suitable for high-power applications.

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产品参数:

Detailed parameter description:

- VDS (Drain-Source Voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V (m次): 280m次
- Maximum drain current (ID): 18A
- Technology: SJ_Deep-Trench
- Package: TO247

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial frequency converters: Because VBP18R18SE has high drain voltage and high current withstand capability, it is suitable for power switches and inverter modules in industrial frequency converters.
2. High-performance power module: Among high-performance power modules, this product can be used in switching power supplies and DC-DC converters to provide stable power output.
3. Wind power controller: In wind power systems, VBP18R18SE can be used in power switches and current control circuits in wind power controllers to ensure efficient operation of the system.
4. Power transmission and distribution equipment: Suitable for switching devices and protection circuits in power transmission and distribution equipment to achieve safe and stable operation of the power system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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