产品参数:
Detailed parameter description:
- Product model: VBP18R11S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 500
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO247
领域和模块应用:
Examples of applicable fields and modules:
1. Industrial power module: The high drain-source voltage and drain current of VBP18R11S make it suitable for industrial power modules to provide stable and reliable power supply.
2. High-performance motor driver: Due to its high drain-source voltage and drain current, it can be used to design high-performance motor drivers, such as for electric vehicles and industrial machinery.
3. High-voltage direct current transmission system: In the power field, this device can be used to design switch modules in high-voltage direct current transmission systems to improve power transmission efficiency and stability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性