产品简介：
Product introduction:
Model: VBP185R50SFD
Brand: VBsemi
Package: TO247
Features: Single N-channel field effect transistor, using SJ_Multi-EPI technology, has a drain-source voltage (VDS) of 850V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a maximum continuous drain current of 50A ( ID), low on-state resistance is 90mΩ (VGS=10V).
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产品参数：
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 90m次
- Maximum continuous drain current (ID): 50A
- Technology: Using SJ_Multi-EPI technology
领域和模块应用：
Applications:
This product is suitable for the following areas and modules:
1. Industrial power module: Due to its high drain-source voltage and large current characteristics, it can be used in industrial power modules, such as DC regulated power supplies and frequency converters.
2. Electric vehicle charger: With high drain-source voltage and continuous drain current, it is suitable for electric vehicle charger modules and provides efficient and stable charging performance.
3. Solar inverter: Suitable for solar inverter modules to realize DC to AC conversion of solar photovoltaic panels and provide reliable power output.
4. High-voltage switching power supply: Due to its high drain-source voltage and low on-state resistance, it can be used in high-voltage switching power supply modules to achieve efficient and stable switching control.
The above examples illustrate the wide range of applications of VBP185R50SFD products in industry, transportation, energy and other fields.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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