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VBP185R06 产品详细

产品简介:

Product introduction:
VBsemi's VBP185R06 model is a Single N-type power field effect transistor (MOSFET) packaged in TO247. The device is manufactured using Plannar technology for excellent performance and reliability. Its key features include a rated drain-source voltage (VDS) of 850V, a maximum drain current (ID) of 6A, a turn-on voltage (Vth) of 3.5V, and an on-resistance of 1700mΩ at VGS=10V.

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产品参数:


Detailed parameter description:
- Product model: VBP185R06
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 850V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1700m次
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Examples of application areas:
1. Power converter: VBP185R06 can be used in power switching circuits in power converters, such as AC to DC, DC to AC and other converter modules, to help achieve efficient conversion and transmission of electric energy.
2. Power transmission equipment: This device is also suitable for power control modules in power transmission equipment, such as transformers, inductors, etc., to achieve regulation and stability of voltage and current.
3. Industrial automation equipment: VBP185R06 can be used as power switch modules in industrial automation equipment, such as PLCs, frequency converters, etc., to control the start, stop and operating status of the equipment.

These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBP185R06 make it an ideal choice in these applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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