产品参数:
Detailed parameter description:
- Product model: VBP185R04
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2700
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO247
领域和模块应用:
Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and large drain current, VBP185R04 is suitable for industrial power modules such as inverters, DC power supplies and UPS.
2. High-voltage DC transmission system: In the high-voltage DC transmission system, the MOSFET can be used in switching power supplies to achieve stable transmission and control of electric energy.
3. Medical equipment: In medical equipment, VBP185R04 can be used for power switch control of high-power modules such as X-ray machines and medical laser equipment.
4. Solar inverter: As a power switching element in a solar inverter, this product can achieve efficient conversion and output of solar energy.
5. Automotive electronic systems: In automotive electronic systems, the MOSFET can be used to drive motors, control generators and other high-power electronic modules to improve the performance and efficiency of the car.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性