产品简介：
Product introduction:
Model: VBP185R02
Brand: VBsemi
Package: TO247
Features: Single N-channel field effect transistor, using Plannar technology, with 850V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), maximum continuous drain current 2A (ID) , low on-state resistance is 6500mΩ (VGS=10V). VBP185R02 products are widely used in power management, lighting, medical and automotive electronics and other fields.
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产品参数：
Detailed parameter description:
- Transistor type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Low on-state resistance (VGS=10V): 6500m次
- Maximum continuous drain current (ID): 2A
- Technology: Using Plannar technology
领域和模块应用：
Applications:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and low on-state resistance, it can be used in power management modules such as power switches and voltage regulators.
2. LED driver: suitable for LED lighting driver modules, providing stable current output to drive LED lamps.
3. Medical equipment: Can be used in medical equipment modules, such as medical power supplies and drivers for electric medical equipment, to ensure stable and reliable operation of the equipment.
4. Automotive electronics: Suitable for automotive electronic modules, such as electric vehicle controllers and vehicle power management systems, to provide reliable power and driving capabilities.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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