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VBP17R11S 产品详细

产品简介:

VBsemi's VBP17R11S is a single N-channel field effect transistor with a drain-source voltage of 700V, a gate-source voltage of 30V, and a threshold voltage of 3.5V. This product uses SJ_Multi-EPI technology and is packaged as TO247.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 450
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI

领域和模块应用:

This product is suitable for the following areas and modules:
- High-power power module: It can be used in industrial equipment, electric vehicle charging piles and other occasions that require high-power conversion to provide stable power output.
- High-efficiency solar inverter: suitable for inverter modules in solar power generation systems, capable of providing high-efficiency energy conversion.
- Industrial drives: Motor drives that can be used in industrial automation equipment, such as frequency converters and motor controllers, to provide reliable power conversion and control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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