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VBP17R11 产品详细

产品简介:

Product introduction:
VBP17R11 is a VBsemi brand Single N-type MOSFET manufactured using Plannar technology. The product features a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its package is TO247, which is suitable for multiple fields and modules, including high-power power supplies, electric vehicles, wind power generation and industrial automation, etc., and plays an important role in these fields.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1050m次
- Maximum drain current (ID): 11A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Application areas and module examples:
1. High-power power module: Because VBP17R11 has high drain-source voltage and drain current, it is suitable for high-power power modules such as industrial equipment, power systems and frequency converters."
2. Electric vehicle electric drive system: The high voltage and current characteristics of this product make it suitable for electric vehicle electric drive systems, providing efficient power conversion and reliable performance.
3. Wind power generation control module: In wind power generation systems, VBP17R11 can be used to control and adjust the output power of the generator to ensure stable operation of the system.
4. Industrial automation equipment: In industrial automation equipment, this product can be used to control and adjust various motors and actuators to achieve efficient operation of automated production lines.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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