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VBP17R10 产品详细

产品简介:

Product introduction:

The VBP17R10 launched by VBsemi is a Single N-type MOSFET with high performance and reliability. This product uses Plannar technology, has a drain-source voltage (VDS) of 700V, a drain current (ID) of 10A, and has an on-resistance of approximately 1400mΩ at VGS=10V. This product is packaged in TO247 and is suitable for a variety of applications.

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产品参数:

Detailed parameter description:

- Product model: VBP17R10
- Brand: VBsemi
- MOSFET type: Single N
- VDS (drain-source voltage): 700V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: about 1400m次
- ID (drain current): 10A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial power system: VBP17R10 can be used for power switch control in industrial power systems to ensure stable operation and efficient conversion of the system.
2. Wind power generation controller: In the wind power generation controller, VBP17R10 can be used as a switch tube to achieve current control and voltage stabilization of the wind turbine generator set.
3. Automotive electrification system: As a key component in automotive electrification systems, VBP17R10 can be used for battery management and drive control of electric vehicles to improve the energy efficiency and performance of vehicles.
4. HVDC transmission system: In HVDC transmission system, VBP17R10 can be used for switching circuits and power control to achieve efficient transmission and distribution of electric energy.

The above fields and modules require power devices with high performance and reliability to ensure the normal operation of the system, and VBP17R10 is the ideal choice to meet these needs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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