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VBP17R07 产品详细

产品简介:

Product Introduction: VBsemi's VBP17R07 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V (Vth). Using Plannar technology, packaged as TO247.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1400m次
- Maximum drain current (ID): 7A

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial motor driver: VBP17R07 has a high drain-source voltage and moderate drain current, and is suitable for designing industrial motor drivers, such as fans, pumps, etc.
2. Solar inverter: In solar power generation systems, power MOSFETs that handle high voltage and current are required. VBP17R07 can be used to design the power switching circuit of solar inverters.
3. Industrial automation control system: Because VBP17R07 has high voltage and current tolerance, it can be used to design power switch modules in industrial automation control systems, such as motor control, electric furnace control, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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