MOSFET

您现在的位置 > 首页 > MOSFET

VBP17R04 产品详细

产品简介:

Product introduction:
VBsemi's VBP17R04 is a single N-channel field effect transistor manufactured using Plannar technology. It has a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The product is packaged in TO247 and has a drain current (ID) of 4A and an on-resistance of 2600mΩ (VGS=10V).

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Product model: VBP17R04
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- VDS (drain-source voltage): 700V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On resistance (VGS=10V): 2600m次
- Drain current (ID): 4A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
1. Power electronic modules: The high drain voltage and low drain current of VBP17R04 make it suitable for power electronic modules, such as DC power supplies and inverters, for industrial control and power transmission.
2. Solar inverter: This product can be used in a solar inverter to convert the DC power generated by solar panels into AC power to supply electricity to homes and businesses.
3. Electric vehicle charger: The high voltage tolerance and stability of VBP17R04 make it an ideal choice for electric vehicle charger for fast and efficient charging of electric vehicle batteries.
4. High-voltage switch module: Due to its high-voltage withstand capability, this product is suitable for high-voltage switch modules and is used as switching equipment in power transmission and distribution systems to ensure the stable operation of the power system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询