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VBP175R05 产品详细

产品简介:

Product Introduction: VBsemi's VBP175R05 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 750V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V ( Vth). It adopts Plannar technology and is packaged as TO247.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 750V
- Gate-source voltage (VGS, plus or minus): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 5A

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power system: Since VBP175R05 has a high drain-source voltage and moderate drain current, it is suitable for power switching modules in industrial power systems, such as power transformers, power transmission systems, etc.
2. Automobile electrification: In the field of automobile electrification, high-voltage and high-current power MOSFETs are required to control motors, battery management systems, etc. VBP175R05 can be used to design power control circuits for these applications.
3. Liquid cooling system: VBP175R05 is suitable for power switch modules in liquid cooling systems, such as industrial lasers, welding machines, etc., providing efficient power regulation and control functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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