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VBP175R02 产品详细

产品简介:

Product introduction:
VBsemi's VBP175R02 is a single N-channel field effect transistor manufactured using Plannar technology. It has a drain-source voltage (VDS) of 750V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The product is packaged in TO247 and has a drain current (ID) of 2A and an on-resistance of 6500mΩ (VGS=10V).

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产品参数:

Detailed parameter description:
- Product model: VBP175R02
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- VDS (drain-source voltage): 750V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On resistance (VGS=10V): 6500m次
- Drain current (ID): 2A
- Technology: Plannar
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter: Since VBP175R02 has a high drain voltage and moderate drain current, it is suitable for power inverter modules, used to convert DC power to AC power, used in solar power generation systems and electric vehicle chargers, etc. field.
2. High-voltage switch module: This product can be used as a high-voltage switch module for switching devices in power transmission and distribution systems to ensure the stable operation of the power system.
3. Power management module: VBP175R02 is suitable for power management modules, used to regulate and control the voltage and current in the power system to ensure the stable operation of electronic equipment.
4. LED lighting system: This product can be used as a power drive module in LED lighting systems to provide stable power output for LED lights and achieve efficient lighting effects.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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