This product is a single N-type MOSFET with a maximum drain voltage of 600V and a rated current of 90A. It adopts SJ_Multi-EPI technology and has excellent performance and stability. It is suitable for the design and manufacturing of various modules in the fields of industrial motor drive, power conversion, high-performance power supply and high-voltage DC transmission. . When VGS=10V, the on-resistance is 24mΩ.
parameter:
- Type: Single N-type MOSFET
- Maximum drain voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Rated current (ID): 90A
- Technology: SJ_Multi-EPI
-Package:TO247
Product introduction:
This product is suitable for the following areas and modules:
1. Industrial motor drive module: Due to its high voltage and high current characteristics, it can be used to design and manufacture various types of industrial motor drive modules, such as AC motor drivers, DC motor controllers, etc.
2. Power conversion module: In the field of power conversion, this product can be used to design and manufacture various types of power conversion modules, such as power inverters, power speed regulators, etc., for power control and regulation in industrial production processes.
3. High-performance power module: In the field of high-performance power supply, this product can be used to design and manufacture various types of high-performance power module, such as high-power power supply, DC power supply, etc., for industrial production and communication equipment and other fields.
4. High-voltage DC transmission modules: In high-voltage DC transmission systems, this product can be used to design and manufacture high-voltage DC transmission modules, such as converter stations, inverters, etc., for long-distance power transmission and distribution.
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