Product introduction:
VBsemi's VBP16R67S is a high-performance single N-type power MOSFET with excellent electrical performance and stability. Manufactured using SJ_Multi-EPI technology, the device has high reliability and is suitable for a variety of industrial and automotive applications.
Detailed parameter description:
1. Voltage characteristics: VBP16R67S has a maximum drain-source voltage (VDS) of 600V, which can adapt to various high-voltage application scenarios.
2. Current characteristics: The maximum drain current (ID) reaches 67A, which can provide large current output and meet high power requirements.
3. Switching characteristics: With low on-resistance (34mΩ), when VGS=10V, it is suitable for high-frequency switching modules to achieve high-efficiency power conversion.
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parameter:
- Polarity: Single N
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 34
- Maximum drain current (ID): 67A
- Technology: SJ_Multi-EPI
Package: TO247
Application examples:
1. Industrial power module: Suitable for industrial-grade power modules, such as industrial UPS, frequency converters and DC power supplies, which can provide stable and reliable power output.
2. High-voltage electronic modules: Suitable for high-voltage electronic modules, such as power regulators, electric vehicle chargers, and motor controllers, which can withstand high voltages and achieve stable output.
3. High-frequency switching module: Suitable for high-frequency switching modules, such as radio frequency regulators, power inverters and frequency converters, etc., which can achieve efficient power switching and frequency regulation.
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