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VBP16R34SFD 产品详细

产品简介:

Product introduction: VBsemi's VBP16R34SFD is a TO247 packaged N-channel field effect transistor, manufactured using SJ_Multi-EPI technology. It has a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 34A, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and an on-resistance (VGS) of 80mΩ. =10V). This product is suitable for medium power applications.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 600V, VGS (gate-source voltage) is ㊣30V, Vth (gate threshold voltage) is 3.5V.
- Current parameters: ID (drain current) is 34A.
- Technical characteristics: Using SJ_Multi-EPI technology.
- On-resistance: 80m次 at VGS=10V.
- Package: TO247.

领域和模块应用:

Examples of applicable fields and modules:
1. Electric vehicle drive module: Due to its moderate voltage and current characteristics, VBP16R34SFD is suitable for motor drive modules of electric vehicles and can provide reliable power output.
2. Industrial automation controller: In the field of industrial automation, this transistor can be used to drive medium-power controllers and actuators, such as factory machinery and motor control on production lines.
3. Solar inverter: used in smaller-scale solar inverter modules to convert DC power generated by solar panels into AC power to supply household and small commercial electrical equipment.
4. LED lighting module: Among LED lighting products, this product can be used in medium-power LED driver modules to provide stable power output to drive LED lamp beads.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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