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VBP16R26S 产品详细

产品简介:

Product introduction:
VBP16R26S is a single N-channel MOSFET model produced by VBsemi. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 26A. Manufactured using SJ_Multi-EPI technology and packaged as TO247.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 115
- Drain current (ID): 26A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. Power electronic converter: VBP16R26S is suitable for various power electronic converters, such as variable frequency air conditioners, electric vehicle drive systems, etc., to achieve efficient power conversion and control.
2. Industrial power supply equipment: Due to its high voltage and current characteristics, this device can be used in switching power supplies, power regulators and other modules in industrial power supply equipment for stable power supply.
3. Solar inverter: As a key component in the solar inverter, VBP16R26S can convert the DC power output from the solar panel into AC power for powering homes and commercial purposes.
4. Electric vehicle charging piles: This type of MOSFET is suitable for power switching circuits in electric vehicle charging piles to control charging current and ensure charging safety.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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