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VBP16R11S 产品详细

产品简介:

Product introduction:
VBsemi's VBP16R11S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. This product is packaged in TO247 and is suitable for a variety of application scenarios.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 380
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO247

领域和模块应用:

Examples of applicable fields and modules:
1. Power electronics module: VBP16R11S is suitable for power switching modules in the field of power electronics, such as inverters, frequency converters and switching power supplies, to achieve high-efficiency energy conversion.
2. Electric vehicle driver: In the power inverter and driver of electric vehicles, this MOSFET can be used to control the motor and battery charging system of electric vehicles to provide efficient power output.
3. Solar inverter: Due to its high voltage and current capabilities, VBP16R11S can be used in power switching circuits in solar inverters to achieve conversion and stable output of solar energy.
4. High-frequency inverter: In industrial control systems and variable frequency drives, this device can be used in the power switch module of high-frequency inverters to achieve efficient power conversion and precise frequency control.

These areas and modules are just some examples of where the VBP16R11S may be suitable, actual applications depend on specific circuit design and requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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