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VBP16R10 产品详细

产品简介:

Product introduction:
VBP16R10 is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 10A. Manufactured using Plannar technology and packaged as TO247.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 1000
- Drain current (ID): 10A
- Technology: Plannar

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch: VBP16R10 can be used as various types of power switches, including switching power supplies, battery management systems and DC-DC converters, and is widely used in industrial, automotive and consumer electronics fields.
2. Electric vehicle charger: As a power switching device in an electric vehicle charger, the MOSFET can be used to control the power conversion and regulation in the charger to achieve efficient and stable electric vehicle charging functions.
3. Solar inverter: VBP16R10 is suitable for inverter modules in solar power generation systems, used to convert solar power into AC power, providing reliable energy conversion functions for home and commercial solar systems.
4. Industrial automation equipment: used in motor drive and control modules in industrial automation equipment to achieve precise motion control and efficient energy conversion, improving equipment performance and production efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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