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VBP16R02 产品详细

产品简介:

Product introduction:

VBsemi's VBP16R02 is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and is packaged as TO247.

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产品参数:

Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 4000
- Maximum drain current (ID): 2A

领域和模块应用:

Examples of applicable fields and modules:

- High-power power modules: Suitable for power switches and power control in high-power power modules, such as large industrial equipment, power electronic systems, etc.
- High-frequency power converters: In high-frequency power converters, they can be used as switching tubes to achieve efficient power conversion and power control, such as communication base stations, wireless chargers, etc.
- Automotive electronic systems: Can be used for power management and drive control in automotive electronic systems, such as motor drivers and on-board chargers for electric vehicles.
- High-temperature environment applications: Because the TO247 package has good heat dissipation performance, it is suitable for industrial control systems, metallurgical equipment and other fields in high-temperature environments.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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