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VBP165R96SFD 产品详细

产品简介:

VBP165R96SFD is a single N-type field effect transistor manufactured using SJ_Multi-EPI technology. It has high performance and voltage resistance characteristics and is suitable for high power and high frequency power electronic applications.

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产品参数:

parameter:
- Single N-type field effect transistor
- Rated drain-source voltage VDS(V): 650
- Gate-source voltage VGS(㊣V): 30
- Threshold voltage Vth(V): 3.5
- On-resistance (m次) when gate-source voltage is 10V: 19
- Maximum drain current ID (A): 96
- Technology: SJ_Multi-EPI

Package: TO247

领域和模块应用:

for example:

1. High-frequency power module: Due to its low on-resistance and high-frequency characteristics, VBP165R96SFD is suitable for high-power, high-frequency power modules and can be used to design high-efficiency switching power supplies, inverters and wireless charging equipment.

2. Power transmission system: In power transmission and distribution systems, VBP165R96SFD can be used to design high-power switching equipment, such as smart grids, substations and power distribution cabinets, to achieve safe power transmission and distribution.

3. Industrial driver: VBP165R96SFD can be used as a power switching device for various industrial drivers, such as motor drivers, variable frequency air conditioning systems and industrial robots, to help achieve efficient energy management and precision control.

4. Solar inverter: In solar inverters, VBP165R96SFD can be used as a high-power switching device for power conversion and inversion of solar panels to improve the efficiency and reliability of the inverter.

*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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