Product introduction:
Model: VBP165R42SFD
Brand: VBsemi
Affiliated company: Shenzhen Weibi Semiconductor Co., Ltd.
Package: TO247
Detailed parameter description:
1. Single N: Single N channel
2. VDS(V): 650 - Saturated Drain-Source Voltage
3. VGS(±V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=10V(mΩ): 56 - Drain-source resistance at VGS=10V
6. ID (A): 42 - Continuous Drain Current
7. Technology: SJ_Multi-EPI - Multiple epitaxial structure technology
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parameter:
-Single N
- VDS(V): 650
-VGS(㊣V): 30
-Vth(V): 3.5
- VGS=10V(m次): 56
- ID (A): 42
- Technology: SJ_Multi-EPI
Applicable areas and modules:
1. Power module: Due to its high drain-source voltage and drain current, it is suitable for power modules such as DC-DC converters and AC-DC inverters.
2. High-frequency switching circuit: The gate threshold voltage is low and is suitable for high-frequency switching circuits, such as radio frequency power amplifiers and radio frequency switches.
3. Automotive electronics: Can be used in automotive electronic modules, such as engine control units (ECUs) and power inverters for electric vehicles.
4. Industrial automation: In industrial automation, it can be used for equipment such as controllers, servo drives, and industrial power supplies.
5. Solar Inverter: Due to its high drain-source voltage and drain current capabilities, it is suitable for use in solar inverters to convert solar power into usable electrical energy.
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