Product introduction: VBsemi's VBP165R41SFD is a TO247 packaged N-channel field effect transistor, manufactured using SJ_Multi-EPI technology. It has a drain-to-source voltage (VDS) of 650V, a drain current (ID) of 41A, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and an on-resistance (VGS) of 62mΩ. =10V). This product is suitable for applications requiring high voltage and current, such as power electronic modules and drives.
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Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, Vth (gate threshold voltage) is 3.5V.
- Current parameters: ID (drain current) is 41A.
- Technical characteristics: Using SJ_Multi-EPI technology.
- On-resistance: 62m次 at VGS=10V.
- Package: TO247.
Examples of applicable fields and modules:
1. Industrial power module: Due to its high voltage and high current characteristics, VBP165R41SFD is suitable for industrial power modules and can be used in equipment such as inverters, UPS (uninterruptible power supply systems) and motor drivers.
2. Solar Inverter: In a solar system, this transistor can be used in an inverter module to convert the DC power collected by the solar panels into AC power.
3. Electric vehicle charger: Power switch module used in electric vehicle chargers, supporting high voltage and high current fast charging.
4. High-performance power module: This product can also play a role in power modules that require high performance and high reliability, such as server power supplies and communication base station power supplies.
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