Product introduction:
The VBP165R38SFD launched by VBsemi is a high-performance single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This type of MOSFET is packaged in TO247 and is suitable for industrial power supplies, automotive electronics, solar inverters, power management, LED lighting and other fields and modules. It has broad application prospects and market demand.
Detailed parameter description:
1. Drain-source voltage (VDS): 650V
2. Gate-source voltage (VGS): ㊣30V
3. Threshold voltage (Vth): 3.5V
4. Drain-source resistance (m次) at VGS=10V: 67
5. Maximum drain current (ID): 38A
6. Technology: SJ_Multi-EPI
Applicable areas and modules:
1. Industrial power module: The high drain-source voltage and large drain current of VBP165R38SFD make it an ideal choice for industrial power modules. It can be used in various industrial applications such as frequency converters, welding machines, UPS, etc.
2. Automotive electronic systems: The high performance and reliability of this MOSFET make it suitable for power control modules in automotive electronic systems, such as electric vehicle drives, charging piles, etc.
3. Solar inverter: The high drain-source voltage and low drain-source resistance of VBP165R38SFD make it suitable for solar inverters, which can provide efficient energy conversion and stable output.
4. Power management module: In the field of power management, this type of MOSFET can be used in switching power supplies, DC-DC converters and other modules to achieve efficient energy conversion and precise power management.
5. LED lighting system: VBP165R38SFD can be used as a power drive module in LED lighting systems, providing stable power supply and efficient energy conversion to meet lighting needs in different scenarios.
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